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Growth Equipment

The MBE laboratory is equipped with EPI 930 MBE system that can handle wafers up to 3" substrates.  The system is modular, comprising of a growth chamber, a buffer chamber, and an introduction chamber, which are connected through gate valves.  The growth chamber is a nine-source chamber with full beam monitoring facilities, such as mass spectrometer (500 AMU RGA), ionization gauge and structural monitoring facilities such as 15KeV RHEED gun with image, acquisition and analysis system.  The system is loaded with elemental Ga, Al, In, valved As cracker, Sb cracker, Be for p-type dopant and SnTe source for n-type dopant and has been specially designed with optical ports for ellipsometry, ports at grazing incidence to the substrate for in-situ desorption measurements, numerous small optical ports near the source flange for the individual flux measurements, and an optical port on the substrate manipulator to measure the substrate temperature from the back of the substrate. It is currently devoted to the growth of Sb based compounds and alloys.

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