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Date: 04/06/09
Time: 10:00

Mr. Sudhakar Bharatan will defend his thesis entitled, "MBE Growth of Lattice-Matched GaAsSbN/GaAs and InGaAsSbN/GaSb Quantum Wells for optoelectronics devices." on Wednesday, April 15, 2009 at 02.00 PM in the IRC building, Room no- 328 ( PhD conference room). For details click here.

Date	Conference	Title	Author
Jun-08	Electronic Materials Conference Oral Presentation	MBE Grown Dilute Nitride Alloys of GaAsSbN Lattice-Matched to GaAs and GaSbN Quantum Wells	Sudhakar Bharatan et al
Nov-08	ASM/MRS-NC Meeting Poster Presentation	MBE Growth and Characterization of GaSbN and InGaAsSbN Single Quantum Wells	Sudhakar Bharatan et al
Apr-09	Submitted to MRS Spring Meeting	MBE Growth and Characterization of GaSbN and InGaAsSbN SQWs for Mid-Infrared Applications	Sudhakar Bharatan et al
Mar-09	Sumitted to APS March Meeting	MBE Grown GaSbN and InGaAsSbN Single Quantum Wells for Mid-Infrared Applications	Sudhakar Bharatan et al

Date: 08/26/05
Time: 11:51

News

A Study of GaAsSbN/GaAs SQWs for 1.55 µm Emission

Third place in student poster presentation, Fifth Annual Fitzpatrick Center
Symposium of Duke University, Durham, May (2005)

Date: 08/25/05
Time: 16:51

News

MDA Update, ISSUE #53, Spring 2005

Date: 11/10/04
Time: 14:51

News

Nitride News----MBE Growth and Properties of GaAsSbN/GaAs Single Quantum Wells

The growth and properties of GaAsSbN single quantum wells (SQWs) are investigated in this work. The heterostructures were grown on GaAs substrates in an elemental solid source molecular beam epitaxy (MBE) system assisted with a RF plasma nitrogen source. A systematic study has been carried out to determine the influence of various growth conditions, such as the growth temperature and the source shutter opening sequence, on the quality of the grown layers and the incorporation of N and Sb. The effects of ex-situ and in-situ annealing under As overpressure on the optical properties of the layers have also been investigated. Substrate temperature in the range of 450-470 ¢ªC was found to be optimum. Simultaneous opening of the source shutters was found to yield sharper QW interfaces. N and Sb incorporations were found to depend strongly upon substrate temperatures and source shutter opening sequences. A significant increase in PL intensity with a narrowing of PL line shape and blue shift in emission energy were observed on annealing the GaAsSbN/GaAs SQW, with in-situ annealing under As overpressure providing better results, compared to ex-situ annealing.